Product Brief

Features

  • High power & high efficiency
  • Diffraction-limited output
  • Efficient coupling to SMF
  • Operates both continuous wave and pulsed (ns to ms)

Applications

  • LIDAR systems for remote sensing and autonomous vehicles
  • Free-space optical communication
  • Pump source for Er-doped solid-state and fiber laser amplifiers

Notes

1. Class 4 high power laser output. Appropriate precautions should be taken by user.

2. Devices are sensitive to electrostatic discharge (ESD). Appropriate precautions should be taken by user.

Overview

The 1500 to 1600 nm auraTM semiconductor optical amplifier (SOA) is the world’s first c-band diffraction-limited watt-class amplifier. This product is intended to replace bulky, inefficient, and expensive erbium-doped fiber amplifiers (EDFAs). The chip architecture is based on a single-mode tapered waveguide amplifier which can be easily coupled into from a single mode fiber (SMF). The nearly diffraction-limited output enables efficient coupling to single-mode fiber and maximizes far-field irradiance when collimated in free space. Various packaging configurations are offered including: 1) hard-soldered junction-down on C-mount, 2) hard-soldered junction-down on ceramic submount, and 3) unsoldered bare chip.

The auraTM product line is intended to address applications such as free space optical communication, sensing, and LIDAR in consumer, industrial, and defense markets by enabling watt-level direct use output from a semiconductor chip source.

Product Data Sheet
870-1000 nm W Single Spatial Mode Laser

Specifications

General ParameterValueUnit
Optical
Center wavelength1500 to 1600nm
Typical Input Power17dBm
Rated output power2.5/34W/dBm
Gain Bandwidth, 3dB60nm
Gain17dB
RMS Gain Ripple0.1dB
Maximum Noise Figure6dB
Slow Axis M2 (ISO 11146-3)1.3-
Fraction of Power Diffraction-Limited90%
Slow Axis Divergence, 4Dσ6deg
Fast Axis Divergence, 4Dσ55deg
Astigmatism1.7mm
Electrical
Operating Current 12A
Operating voltage 1.2V
Electrical-to-Optical Efficiency22%
Series Resistance25
Thermal
Operating Temperature20°C
Wavelength-Temperature Coefficient0.5nm/°C
Thermal Resistance3.2W/A