Features
- 35 GHz bandwidth
- Compact, low-profile package
Applications
- RF Photonic Links
- Photonic RF Generation
- Sensing
- Communications
Notes
1.Device is unterminated for high power applications.
2.This design requires an external bias tee.
3.Measurements taken for specification were performed at 20°C and -5 V bias into a 50 Ω load, at a 1550nm wavelength.
Overview
The FP1015b high-power photodetector is designed for high-power, wide-bandwidth applications. This device has a compact, low-profile package with a single-mode SMF-28 fiber connection and a 1.85 mm “V” type female RF connector. This product has been developed for high optical power applications such as RF photonic links, sensing, and photonic generation of RF signals up to 20 dBm RF power and a 35 GHz bandwidth.
The specifications shown below describe the FP1015b model. Options are available to customize our high-power photodiode product to your specific application that may demand responsivity, RF power, or bandwidth performance to be optimized. An option for an integrated bias tee is in development, but currently an external bias tee is required.
Specifications
Parameter | Value | unit | |
---|---|---|---|
Wavelength Range (Optimum) | min max | 1280 1620 | nm nm |
Responsivity | min | 0.4 | A/W |
Bandwidth | min | 35 | GHz |
Output RF power (1-dB compression point) | min | 20 | dBm |
Photocurrent (1-dB compression point) | min | 80 | mA |
Dark Current | max | 100 | nA |
Operating Temperature | min max | -5 75 | °C °C |