Product Brief

Features

  • 35 GHz bandwidth
  • Compact, low-profile package

Applications

  • RF Photonic Links
  • Photonic RF Generation
  • Sensing
  • Communications

Notes

1.Device is unterminated for high power applications.

2.This design requires an external bias tee.

3.Measurements taken for specification were performed at 20°C and -5 V bias into a 50 Ω load, at a 1550nm wavelength.

Overview

The FP1015b high-power photodetector is designed for high-power, wide-bandwidth applications. This device has a compact, low-profile package with a single-mode SF28 fiber connection and a 1.85 mm “V” type female RF connector. This product has been developed for high optical power applications such as RF photonic links, sensing, and photonic generation of RF signals up to 20 dBm RF power and a 35 GHz bandwidth.

The specifications shown below describe the FP1015b model. Options are available to customize our high-power photodiode product to your specific application that may demand responsivity, RF power, or bandwidth performance to be optimized. An option for an integrated bias tee is in development.

Product Data Sheet
FP1015X package with logo without pins

Specifications

Parameter Valueunit
Wavelength Range (Optimum)min
max
1280
1620
nm
nm
Responsivitymin.04A/W
Bandwidthmin35GHz
Output RF Power (Saturation, P1-dB) min20dBm
Photocurrent(Saturation, P1-dB)min80mA
Dark Currentmax100nA
Operating Temperaturemin
max
-5
75
°C
°C